may 2001 preliminary ? 2001 fairchild semiconductor corporation FDS3601N rev b(w) FDS3601N 100v dual n-channel powertrench ? ? ? ? mosfet general description these n-channel mosfets have been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. these mosfets feature faster switching and lower gate charge than other mosfets with comparable r ds(on) specifications. the result is a mosfet that is easy and safer to drive (even at very high frequencies), and dc/dc power supply designs with higher overall efficiency. features ? 1.3 a, 100 v. r ds(on) = 480 m ? @ v gs = 10 v r ds(on) = 530 m ? @ v gs = 6 v ? fast switching speed ? low gate charge (3.7nc typical) ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability s2 so-8 g2 s1 g1 d2 d2 d1 d1 4 3 2 1 5 6 7 8 q1 q2 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 100 v v gss gate-source voltage 20 v i d drain current ? continuous (note 1a) 1.3 a ? pulsed 6 power dissipation for dual operation 2 power dissipation for single operation (note 1a) 1.6 (note 1b) 1.0 p d (note 1c) 0.9 w t j , t stg operating and storage junction temperature range ?55 to +175 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 78 c/w r jc thermal resistance, junction-to-case (note 1) 40 c/w package marking and ordering information device marking device reel size tape width quantity FDS3601N FDS3601N 13?? 12mm 2500 units FDS3601N
FDS3601N rev b(w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain-source avalanche ratings (note 2) w dss drain-source avalanche energy single pulse, v dd = 50 v, i d = 1.3 a 26 mj i ar drain-source avalanche current 1.3 a off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 100 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a,referenced to 25 c 105 mv/ c i dss zero gate voltage drain current v ds = 80 v, v gs = 0 v 10 a i gssf gate?body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?20 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 2.6 4 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a,referenced to 25 c ?5 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 1.3 a v gs = 6 v, i d = 1.3 a v gs = 10 v, i d = 1.3 a, t j = 125 c 350 376 664 480 530 955 m ? i d(on) on?state drain current v gs = 10 v, v ds = 10 v 3 a g fs forward transconductance v ds = 5v, i d = 1.3 a 3.6 s dynamic characteristics c iss input capacitance 153 pf c oss output capacitance 5 pf c rss reverse transfer capacitance v ds = 50 v, v gs = 0 v, f = 1.0 mhz 1 pf switching characteristics (note 2) t d(on) turn?on delay time 8 16 ns t r turn?on rise time 4 8 ns t d(off) turn?off delay time 11 20 ns t f turn?off fall time v dd = 50 v, i d = 1 a, v gs = 10 v, r gen = 6 ? 6 12 ns q g total gate charge 3.7 5 nc q gs gate?source charge 0.8 nc q gd gate?drain charge v ds = 50 v, i d = 1.3 a, v gs = 10 v 1 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 1.3 a v sd drain?source diode forward voltage v gs = 0 v, i s = 1.3 a (note 2) 0.8 1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 78c/w when mounted on a 0.5in 2 pad of 2 oz copper b) 125c/w when mounted on a 0.02 in 2 pad of 2 oz copper c) 135c/w when mounted on a minimum pad. 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDS3601N
FDS3601N rev b(w) typical characteristics 0 1 2 3 4 02468 v ds , drain-source voltage (v) i d , drain current (a ) 4.0v 5.0v v gs =10v 4.5v 6.0v 0.8 1 1.2 1.4 1.6 01234 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 4.0v 5.0v 4.5v 10v 6.0v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.2 0.6 1 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistanc e i d = 1.3a v gs = 10v 0.25 0.5 0.75 1 1.25 2.545.578.510 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 0.6a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 1.5 3 4.5 6 1.5 2.5 3.5 4.5 5.5 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c 25 o c v ds = 5v -55 o c 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDS3601N
FDS3601N rev b(w) typical characteristics 0 2 4 6 8 10 01234 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 1.3a v ds = 30v 70v 50v 0 50 100 150 200 0 1020304050 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 v ds , drain-source voltage (v) i d , drain current (a ) dc 1s 100ms r ds(on) limit v gs = 10v single pulse r ja = 135 o c/w t a = 25 o c 10ms 1ms 100s 10s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja =135c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), normalized effective transient thermal resistance r ja (t) = r(t) + r ja r ja = 135 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. FDS3601N
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